| PART |
Description |
Maker |
| MGY20N120D_D ON1930 MGY20N120D ON1929 |
IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ONSEMI[ON Semiconductor]
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| SML50EUZ03LC |
50 A, 300 V, SILICON, RECTIFIER DIODE, TO-264
|
SEMELAB LTD
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| IXGH10N60AU1 IXGH10N60U1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
|
IXYS Corporation
|
| IXGH10N100U1 IXGH10N100AU1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| APT20GN60SG APT20GN60BG |
NPT IGBT & Trench IGBT
IGBT w/ anti-parallel diode
|
Microsemi
|
| SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultrafast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| SKW15N120 Q67040-S4281 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode
FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软，恢复快反平行Emcon二极
|
INFINEON[Infineon Technologies AG]
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
